Photodiode structures are grown by liquid phase epitaxy on InAs substrate. Schematic band diagram of standard PD structure with cut-off 3,8 mm is schematically presented below. Spectral response is measured at room temperature and zero bias. 3.8 mm cut-off is measured at 10% of the maximum responsivity.

Photodiodes PD36 structure

Standard PD36 heterostructure