1600-2400 nm Light Emitting Diodes — Main Parameters

   The main techniques that we use for heterostructure growth are Metal-Organic Chemical Vapor Deposition (MOCVD) and liquid-phase epitaxy (LPE).LEDs for 1.6-2.4 µm spectral range were fabricated from narrow band-gap GaInAsSb/AlGaAsSb heterostructures lattice matched to GaSb substrate.
Light Emitting Diodes for 1.6-2.4 µm spectral range
Standard LED models (LED chip with circular or ring top contact) - LEDXX
Model Peak emission
wavelength, nm
FWHM of the
emission band, nm
Power, mW Voltage*, V Maximum
operating
current, mA
Switching time, ns Operating temperature
range, °C
QCW mode* Pulse mode**
min max min max min max min max QCW mode Pulse mode
LED18 1.85 1.83 1.87 100 200 0.7 1.1 15 25 0.5-1.5 250 2000 10-30 –240...+50
1.88 1.87 1.90 100 200 0.7 1.1 15 25 0.5-1.5
LED19 1.95 1.92 1.97 100 200 0.8 1.2 20 30 0.5-1.5
LED20 2.05 2.02 2.07 150 250 0.8 1.2 20 30 0.5-1.5
LED21 2.15 2.13 2.16 150 250 0.8 1.2 20 30 0.5-1.0
2.18 2.17 2.19 150 250 0.8 1.2 15 25 0.5-1.0
LED22 2.20 2.19 2.22 150 250 0.8 1.2 15 25 0.5-1.0
2.27 2.25 2.29 150 250 0.7 1.1 15 25 0.5-1.0
LED23 2.31 2.30 2.33 170 270 0.6 1.0 12 20 0.8-2.5
2.35 2.33 2.39 170 270 0.6 1.0 12 20 0.5-1.0

LED Flip-Chip models (top surface of a LED chip is free of contacts) - LEDXXFC
Model Peak emission
wavelength, nm
FWHM of the
emission band, nm
Power, mW Voltage*, V Maximum
operating
current, mA
Switching time, ns Operating temperature
range, °C
QCW mode* Pulse mode**
min max min max min max min max QCW mode Pulse mode
LED16FC 1.65 1.60 1.69 70 150 0.8 2.0 20 35 0.8-4.8 150-200 1000 10-30 –240...+50
LED17FC 1.75 1.70 1.79 100 160 0.8 2.0 20 35 0.8-4.8
LED18FC 1.85 1.80 1.89 100 180 0.7 1.4 20 30 0.6-2.0 200 2000
LED19FC 1.95 1.90 1.99 100 180 0.8 1.6 20 35 0.6-2.4
LED20FC 2.05 2.00 2.09 140 220 0.8 2.0 20 35 0.5-1.0
LED21FC 2.15 2.10 2.19 200 300 0.8 2.5 20 40 1.6-2.8
LED22FC 2.25 2.20 2.29 200 300 0.8 2.5 20 40 0.6-2.8
LED23FC 2.35 2.30 2.37 200 340 0.8 1.4 20 30 1.2-2.8

* Repetition rate: 0.5 kHz, pulse duration: 1 ms, duty circle: 50%, current: 200 mА
** Repetition rate: 1 kHz, pulse duration: 1 µs, duty circle: 0.1%, current: 1 А

Company contact: Nikolay Stoyanov e-mail ns@iropt6.ioffe.ru