2800-4600 nm Light Emitting Diodes — Main Parameters

Product Line Overview

LEDs Datasheets

LEDs Parameters

LEDs chip Design

LED Array and Matrix

LED Packages

Common info

Range of Applications

Photodiodes

Electronics

Narrow band-gap InAsSb/InAsSbP lattice matched to InAs substrate were used to create LEDs for 2.8-4.6 µm spectral range.
Light Emitting Diodes for 2.8-4.6 µm spectral range

Standard LED models (LED chip with circular or ring top contact) - LEDXX
Model		Peak emission wavelength, nm		FWHM of the emission band, nm		Power, mW				Voltage^*, V	Maximum operating current, mA		Switching time, ns	Operating temperature range, °C
		Peak emission wavelength, nm		FWHM of the emission band, nm		QCW mode^*		Pulse mode^**			Maximum operating current, mA
		min	max	min	max	min	max	min	max		QCW mode	Pulse mode
LED29	2.84	2.80	2.90	300	500	5	10	120	170	1.0-1.4	250	2000	10-30	–240...+50
LED34	3.40	3.32	3.46	400	600	25	45	320	480	0.3-0.5
LED35	3.55	3.50	3.65	400	600	20	40	180	220	0.2-0.4
LED36	3.65	3.60	3.70	400	600	20	40	1820	220	0.2-0.4
LED38	3.75	3.70	3.85	500	700	20	40	180	220	0.5-0.8
LED39	3.90	3.85	3.95	550	750	15	30	180	220	0.5-0.8
LED41	4.05	3.95	4.10	700	1000	15	30	180	220	0.5-0.7
LED43	4.15	4.10	4.30	700	1000	8	12	180	220	0.2-0.8
LED46	4.45	4.40	4.60	800	1100	4	8	120	160	1.6-2.6

LED Flip-Chip models (top surface of a LED chip is free of contacts) - LEDXXFC
LED34FC	3.40	3.35	3.45	320	400	30	45	340	480	0.2-0.4	200	2000	10-30	–240...+50
LED37FC	3.70	3.66	3.72	420	500	12	24	180	200	0.2-0.4
LED37FC	3.75	3.73	3.78	520	600	20	45	300	480	0.2-0.4

^* Repetition rate: 0.5 kHz, pulse duration: 1 ms, duty circle: 50%, current: 200 má
^** Repetition rate: 2 kHz, pulse duration: 0,5 µs, duty circle: 0.1%, current: 1 á

Company contact: Nikolay Stoyanov

ns@iropt6.ioffe.ru