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LED Chip Design
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Main post-grown technological processes that forms Mid IR LED chips are presented below:
- Decreasing the wafer thickness to 200 µm
- Deposition of the full area contact multilayer system Cr/(Au+Te)/Ni/Au to n-type semiconductor

- Photolithography for the circular or ring top contacts

- Deposition of the top contact multilayer system Cr/(Au+Zn)/Ni/Au to p-type semiconductor

- Lift-off removing of the photoresist

- Photolithography for LED chip forming

- Etching of separation channels

- Cutting LED chips

Standard Mid Infrared LED chip
Company contact: Nikolay Stoyanov
ns@iropt6.ioffe.ru
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