About the Company

Yuri P. Yakovlev
Яковлев Юрий Павлович Contact points (tel. / E-mail):
+7 (812) 292-79-56
yakovlev@iropto.ioffe.ru

Yury P. Yakovlev is Professor and Head of the Laboratory of Infrared Optoelectronics (LIRO) at Ioffe Physico-Technical Institute, St Petersburg. His research interests include physics and technology of narrow band gap III-V solid alloys, heterostructures, nanoheterostructures and optoelectronic devices.
Yury P. Yakovlev was born on October 17, 1939. He graduated with a M.Sc. degree from the Leningrad Electrical Engineering Institute in 1962 and jointed Ioffe Physico-Technical Institute in 1969. He received his Ph.D. (Candidate) degree in 1978 and the Doctor of Science degree in 1995 both in physics and mathematics from Ioffe Institute.
His first activity included R&D of GaAs and GaP light emitting diodes and their applications in industry. Yury Yakovlev has been involved in MID-IR optoelectronics related research since 1982. In 1988, he together with Prof. A.A. Rogachev suggested and realized the quantum-size laser based on type II GaSb/GaAlAsSb heterostructure operating at 2 µm up to room temperature. During 1986-1996 he with the colleagues developed the series of light-emitting diodes, laser diodes and photodiodes based on GaInAsSb/GaAlAsSb and InAsSb/InAsSbP heterostructures for the spectral range of 1.6-5 µm, as well as tunable diode lasers for the 2.7-3.7 µm spectral range operating at 77-200K; avalanche and pin- IR photodiodes for 2-5 µm spectral range. Yury Yakovlev made many research contributions in optoelectronics, laser physics and devices, and laser applications and optics. His Doctor of Science degree has devoted to IR optoelectronics based on GaSb solid solutions.
In 1995, Yury P. Yakovlev organized the Laboratory of Infrared Optoelectronics (LIRO) in Ioffe Institute. He has supervised over 12 candidates in Ph.D. studies, and was promoted to Professor in 1999. He has been the recipient of a number of research grants from national and international granting bodies including RFBR, EC, CRDF, ISTC. In 2005, he with his colleagues was awarded by A.F. Ioffe Prize for study optical and magnetotransport properties of the type II heterostructures based on III-V semiconductors.
In 1992, Yury Yakovlev established an optoelectronic company, IBSG, with an interest in MID-IR semiconductor devices. The company is focused on LEDs, tunable lasers and photodiodes for 2-5 µm spectral range.
Prof. Y.P. Yakovlev has authored or co-authored 80 patents, over 200 papers, reviews and book chapters. Some of his main publications are listed below:
1. Yu.P. Yakovlev, A.N. Baranov, A.N. Imenkov, V.V. Sherstnev and M.P. Mikhailova "Optoelectronic LED-photodiode Pairs for Moisture and Gas sensors in the spectral range 1.8-4.8 µm", Proc. SPIE, v.1510, 1991, p.128.
2. A.N.Baranov, A.N.Imenkov, M.P.Mikhailova and Yu.P.Yakovlev "Semiconductor Lasers And Photodiodes For Gas Analyzers In the Spectral Range 1.8-4.8 µm.", Proc. SPIE, v.1724, Tunable Laser Diode Applications, 1992, pp. 78-82.
3. A.N.Baranov, A.N.Imenkov, V.V.Sherstnev, Yu.P.Yakovlev, "2.7-3.9 µm InAsSb/InAsSbP lasers", Appl.Phys.Lett., 64, 2480 (1994).
4. Yu.P.Yakovlev, A.N.Baranov, A.N.Imenkov, V.V.Sherstnev et al. "Injection InAsSb/InAsSbP lasers for high-resolution spectroscopy." Kvantovaya Electronika, 20(9), 1-9 (1993).
5. Yu.P.Yakovlev, K.D.Moiseev, M.P.Mikhailova, O.G.Ershov, G.G.Zegrya "Longwavelength ( =3.26 µm) with a single isolated GaInAsSb/p-InAs type II heterojunction in an active layer" (Tech.Phys.Lett.) 21(12), 482-484.
6. A.A.Popov, V.V.Sherstnev, A.N.Baranov, C.Aliber and Yu.P.Yakovlev "Continuous-wave operation of single mode GaInAsSb lasers emitting near 2,2 µm at peltier temperatures" Elect. Lett., 34 (1998).
7. S.Civis, A.N.Imenkov, A.P.Danilova, N.M.Kolchanova, V.V.Sherstnev, Yu.P.Yakovlev, A.D. Walters "A tunable single-mode 3.2 µm laser based on an InAsSb/InAsSbP double heterostructure with drive-current tuning range of 10 cm-1" Spectrochemica Acta, Part A, 56, 2125-2130 (2000).
8. M.P. Mikhailova, K.D. Moiseev and Yu.P. Yakovlev "Interface-induced optical and transport phenomena in type II broken-gap single heterostructures" (topical review), Semicond. Sci. Technol., 19, 109-128 (2004).
9. A.M.Monakhov, V.V.Sherstnev, A.P.Astakhova, Yu.P.Yakovlev, G.Boissier, R.Teissier, A.N.Baranov, Experimental observation of whispering gallery modes in sector disk lasers, Appl.Phys.Lett.(USA), 94, 051102, (2009).
10. V.V.Sherstnev, D.A.Starostenko, I.A.Andreev, G.G.Konovalov, N.D.Il?inskaya, O.Yu.Serebrennikova, Yu.P.Yakovlev., Photodiodes based on InAs / InAs0.88Sb0.12 / InAsSbP heterostructure for the 1.5 - 4.8 ?m spectral range., Technical Physics Letters (USA),, v.37, n. 1, pp. 5-7, 2011, (transl.of: Pisma, Zh.Tekh.Fiz(USSR), 37, (1), pp.11-17, (2011)).
12. A.N.Imenkov, V.V.Sherstnev, E.A.Grebenshchikova, M.A.Sipovskaya, M.I.Larchenkov, D.I.Tarasov, A.N.Baranov and Yu.P.Yakovlev., Study of spatial modes in half-disk lasers based on AlGaAsSb / InGaAsSb- quantum well nanoheterostructures., Semiconductors (USA), 45(3), pp.355-361, (2011), (transl.of: Sov.Phys. Semicond (USSR), 45(3), pp365-371, (2011)).

Company contact: Dr. Kunitsyna Ekaterina e-mail IBSG.inform@gmail.com kunits@iropt9.ioffe.ru